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| TH430 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TH430 is Designed for SSB ad VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE 0.500 4L FLG .112x45 A L FEATURES: * PG = 14.5 dB min. at 220 W/30 MHz * IMD = -30 dB max. * OmnigoldTM Metalization System FULL R E C O.125 NOM. C B B D G F E E H IJ K MAXIMUM RATINGS DIM MINIMUM inches / mm MAXIMUM inches / mm IC VCBO VCEO VEBO PDISS TJ TSTG JC 40 A 110 V 55 V 4.0 V 330 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.40 C/W A B C D E F G H I J K L .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 .980 / 24.89 1.050 / 26.67 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICEO ICES hFE Cob GP IMD3 C TC = 25 C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 20 mA VCE = 30 V VCE = 60 V VCE = 6.0 V VCB = 50 V VCE = 50 V POUT = 250 W ICQ = 150 mA (PEP) MINIMUM TYPICAL MAXIMUM 55 110 4.0 10 10 UNITS V V V mA mA --pF dB dBc % IC = 10 A f = 1.0 MHz f = 30 MHz 15 320 14.5 80 360 -30 37 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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